19A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Drain Current-Max (ID) | 19 A |
| Drain-source On Resistance-Max | 0.1800 ohm |
| DS Breakdown Voltage-Min | 200 V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-263AB |
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