19A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE |
Drain Current-Max (ID) | 19 A |
Drain-source On Resistance-Max | 0.1800 ohm |
DS Breakdown Voltage-Min | 200 V |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-263AB |
Beoordelingen
Er zijn nog geen beoordelingen.