GLS29SF040-55-4C-NHE NOR-flash 512K x 8, SSF FLASH, 128B Sector

FEATURES:
• Organized as 256K x8 / 512K x8
• Single Voltage Read and Write Operations
– 4.5-5.5V for GLS29SF020/040
– 2.7-3.6V for GLS29VF020/040
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption:
– Active Current: 10 mA (typical)
– Standby Current:
30 μA (typical) for GLS29SF020/040
1 μA (typical) for GLS29VF020/040
• Sector-Erase Capability
– Uniform 128 Byte sectors
• Fast Read Access Time:
– 55 ns for GLS29SF020/040
– 70 ns for GLS29VF020/040
• Latched Address and Data
• Fast Erase and Byte-Program:
– Sector-Erase Time: 18 ms (typical)
– Chip-Erase Time: 70 ms (typical)
– Byte-Program Time: 14 μs (typical)
– Chip Rewrite Time:
4 seconds (typical) for GLS29SF/VF020
8 seconds (typical) for GLS29SF/VF040
• Automatic Write Timing
– Internal VPP Generation
• End-of-Write Detection
– Toggle Bit
– Data# Polling
• TTL I/O Compatibility for GLS29SF020/040
• CMOS I/O Compatibility for GLS29VF020/040
• JEDEC Standard
– Flash EEPROM Pinouts and command sets
• Packages Available
– 32-lead PLCC
• All non-Pb (lead-free) devices are RoHS compliant