FQP13N10 Power MOSFET, N Channel, 100 V, 12.8 A
€2,50
ON Semiconductor, FQP13N10 Power Transistor. For President Lincoln II
Op voorraad
VergelijkThe FQP13N10 is a 100V N-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. This product is general usage and suitable for many different applications.
- Low gate charge
- 100% avalanche tested
- Improved system reliability in PFC and soft switching topologies
- Switching loss improvements
- Lower conduction loss
- 175°C maximum junction temperature rating
: N Channel
: N Channel
: 100V
: 12.8A
: 0.142ohm
: 0.142ohm
: TO-220AB
: Through Hole
: 10V
: 4V
: 65W
: 65W
: 3Pins
: 175°C
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