2N6661 90V, 4 Ohm, N-Channel, DMOS FET Philips
€7,50
90V, 4 Ohm, N-Channel, Enhancement-Mode, Vertical DMOS FET
Original Philips
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Vergelijk90V, 4 Ohm, N-Channel, Enhancement-Mode, Vertical DMOS FET
Original Philips
2N6661 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and a wellproven silicon-gate manufacturing process. This combination produces a device with the power-handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
| Kenmerk | Waarde |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 350 mA |
| Maximum Drain Source Voltage | 90 V |
| Package Type | TO-39 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 5 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 0.8V |
| Maximum Power Dissipation | 6.25 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | 20 V |
| Number of Elements per Chip | 1 |
| Height | 6.6mm |
| Series | 2N6661 |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.2V |
| Width | 9.398 Dia.mm |
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